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HDTV.ru > Новости индустрии > Samsung начинает производство 3D NAND флэш-памяти

Samsung начинает производство 3D NAND флэш-памяти


09.08.2013
Samsung начинает производство 3D NAND флэш-памяти


Компания Samsung вслед за Toshiba заявила о намерении начать массовое производство чипов нового поколения флэш-памяти, называемой «вертикальной NAND» или 3D флэш-память, которая позволит резко увеличить емкости твердотельных накопителей, являющихся конкурентами вращающихся жестких дисков.
В Samsung V-NAND использована объемная структура ячейки памяти с 24 слоями. Компания сократила производственные затраты, используя свою собственную технику травления для пробивки отверстий с самого верхнего слоя на нижний.

По сравнению с 20 нм поколением NAND флэш-памяти с плавающим затвором, плотность V-NAND может быть увеличена более чем на 100%. Емкость микросхемы (чипа) для массового производства составляет 128 Гбит, но может быть увеличена до 1 Тбит и выше, утверждает Samsung.
Кроме того, по сравнению с 10 нм поколением прежней NAND флэш-памяти, надежность эксплуатации и скорости записи у V-NAND может быть выше на 100-900 % и 100 %, соответственно.
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